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LETE - - OBSO High-Voltage EL Lamp Driver Package Options Device HV8051 HV8053 Input Voltage 1.0V to 1.6V 2.4V to 3.5V 8-Lead SO HV8051LG HV8053LG Die HV8051X HV8053X HV8051 HV8053 Ordering Information Features Processed with HVCMOS(R) technology 1.0V to 3.5V operating supply voltage DC to AC conversion Adjustable output lamp frequency to control lamp color, lamp life, and power consumption Adjustable converter frequency to eliminate harmonics and optimize power consumption General Description The Supertex HV8051 and HV8053 are high-voltage drivers designed for driving EL lamps of typically 4nF and 12nF for a 1V and 3V operation. The input supply voltage range is from 1.0V to 1.6V for HV8051 and 2.4V to 3.5V for HV8053. The device uses a single inductor and a minimum number of passive components. Typical output voltage that can be applied to the EL lamp is 50V for HV8051 and 70V for HV8053. The HV8051/HV8053 has two internal oscillators, a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an external resistor connected between the Rsw-osc pin and the supply pin VDD. The EL lamp driver frequency is set by an external resistor connected between REL-osc pin and the VDD pin. An external inductor is connected between the Lx and VDD pins. A 0.1F capacitor is connected between Cs and GND pins. The EL lamp is connected between VA and VB pins. The switching BJT charges the external inductor and discharges it into the 0.1F capacitor at Cs. The voltage at Cs will start to increase. The outputs VA and VB are configured as an H bridge and are switching in opposite states to achieve a peak-to-peak voltage of two times the VCS voltage across the EL lamp. Applications Pagers Portable transceiver Cellular phones Remote control units Calculators Pin Configuration 15 Absolute Maximum Ratings* Supply voltage, VDD Operating temperature range Storage temperature range SO-8 power dissipation Note: *All voltages are referenced to GND. VDD RSW-osc Cs Lx 1 2 3 4 8 7 6 5 -0.5V to +4.5V -25C to +85C -65C to +150C 400mW REL-osc VA VB GND top view SO-8 15-9 HV8051/HV8053 Electrical Characteristics DC Characteristics (Over recommended operating conditions unless otherwise specified, TA = 25C) Symbol RDS(on) IIN Parameter On-resistance of switching transistor VDD supply current (including inductor current) Output voltage on VCS HV8051 HV8053 HV8051 HV8053 41 52 43 52 fEL VA-B output drive frequency HV8051 60 70 HV8053 fsw D Switching transistor frequency HV8051 HV8053 Switching transistor duty cycle 200 50 50 85 % 160 220 350 KHz Hz V 8.0 40 Min Typ Max 15 15 65 Units mA I = 50mA VDD = 1.0V to 1.6V. See Figure 1. VDD = 2.4V to 3.5V. See Figure 2. VDD = 1.0V to 1.3V. See Figure 1. VDD = 1.3V to 1.6V. See Figure 1. VDD = 2.4V to 3.0V. See Figure 2. VDD = 3.0V to 3.5V. See Figure 2. VDD = 1.0V. See Figure 1. VDD = 1.6V. See Figure 1. VDD = 2.4V to 3.5V. See Figure 2. VDD = 1.0V to 1.6V. See Figure 1. VDD = 2.4V to 3.5V. See Figure 2. See Figures 1 and 2. Conditions VCS Recommended Operating Conditions Symbol VDD CL TA Supply voltage Parameter HV8051 HV8053 Load capacitance* HV8051 HV8053 Operating temperature Min 1.0 2.4 0 0 -25 4.0 12 85 Typ Max 1.6 3.5 Units V V nF nF C Conditions @ VDD = 1.0V to 1.6V @ VDD = 2.4V to 3.5V. @ VDD = 1.0V to 1.6V @ VDD = 2.4V to 3.5V *Larger panels can be driven with HV8051/HV8053. See application note AN-H33. Block Diagram VDD LETE - - OBSO Switch Osc Q Lx Cs Rsw-osc GND Q VA Output Osc Q VB REL-osc Q 15-10 HV8051/HV8053 Figure 1: VDD = 1.0V to 1.6V 4.5M 1 VDD 560K 1mH1 VDD 0.1F2 1N4148 REL-osc 8 5.1K VA VB GND 2 Rsw-osc 3 Cs 4 Lx 0.1F 100V 7 3.2nF 6 5 Equivalent load to a 1 square inch lamp HV8051 Note: 1. Murata part # LQH4N102K04 (DC resistance < 25) 2. Larger values may be required depending upon supply impedance. For additional information, see application note AN-H33. ETE - OBSOL - Figure 2: VDD = 2.4V to 3.5V 2M 1 VDD VDD 560H1 820K REL-osc 8 5.1K VA VB GND 2 Rsw-osc 3 Cs 1N4148 7 10nF 6 5 0.1F2 4 Lx 0.1F 100V 15 47pF 100V HV8053 1.0nF Note: 1. Murata part # LQH4N561K04 (DC resistance < 14.5) 2. Larger values may be required depending upon supply impedance. For additional information, see application note AN-H33. 15-11 HV8051/HV8053 External Component Description External Component Diode Cs Capacitor REL-osc Selection Guide Line Fast reverse recovery diode, 1N4148 or equivalent. 0.01F to 0.1F, 100V capacitor to GND is used to store the energy transferred from the inductor. The EL lamp frequency is controlled via an external REL resistor connected between REL-osc and VDD of the device. The lamp frequency increases as REL decreases. As the EL lamp frequency increases, the amount of current drawn from the battery will increase and the output voltage VCS will decrease. The color of the EL lamp is dependent upon its frequency. The switching frequency of the converter is controlled via an external resistor, RSW between RSW-osc and VDD of the device. The switching frequency increases as RSW decreases. With a given inductor, as the switching frequency increases, the amount of current drawn from the battery will decrease and the output voltage, VCS, will also decrease. A 1nF capacitor is typically recommended on RSW-osc to GND for HV8053. As the input voltage of the device increases, a faster switching converter frequency is required to avoid saturating the inductor. With the higher switching frequency, more noise will be introduced. This capacitor is used to shunt any switching noise that may couple into the RSW-osc pin. In order to drive the HV8053 more efficiently when high brightness is required, a 47pF, 100V CLx capacitor needs to be used at the Lx pin to GND. This capacitor reduces the total amount of current drawn by the circuit by reducing the dv/dt voltage on the internal switch. The inductor Lx is used to boost the low input voltage by inductive flyback. When the internal switch is on, the inductor is being charged. When the internal switch is off, the charge stored in the inductor will be transferred to the high voltage capacitor CS. The energy stored in the capacitor is then available to the internal H-bridge and therefore to the EL lamp. In general, smaller value inductors, which can handle more current, are more suitable to drive larger size lamps. As the inductor size decreases, the switching frequency of the inductor (controlled by RSW) should be increased to avoid saturation. 560H Murata inductors with 14.5 series DC resistance is typically recommended. For inductors with the same inductance value but with lower series DC resistance, lower RSW value is needed to prevent high current draw and inductor saturation. Lamp Size As the EL lamp size increases, more current will be drawn from the battery to maintain high voltage across the EL lamp. The input power, (VIN x IIN), will also increase. If the input power is greater than the power dissipation of the package (350mW), an external resistor in series with one side of the lamp is recommended to help reduce the package power dissipation. RSW-osc CSW Capacitor CLx Capacitor Lx Inductor Start with a high conversion frequency to avoid inductor saturation. Adjust converter frequency (via RSW-osc) and inductor value to obtain desired lamp drive voltage and supply current. Make sure that inductor current does not approach saturation as specified on the inductor data sheet. Higher VIN's and smaller inductors require a higher conversion frequency to avoid saturation. Adjust the lamp drive frequency via REL-osc to obtain desired lamp brightness and hue. If the desired VCS cannot be obtained, try decreasing lamp drive frequency slightly. If VCS is above 80 volts, insert a 2k resistor in series with the lamp. LETE - Application Hints OBSO - should be bypassed with a capacitor located close to the lamp driver. Values can range from 0.1F to 1F depending on supply impedance. A supply bypass capacitor elsewhere in the host circuit is sufficient if located close to the driver. For lower power consumption, set a low lamp drive frequency, use a 1mH inductor, and adjust power conversion frequency for minimum current draw. For high brightness, set lamp drive frequency for desired hue, use a 330H inductor and adjust power conversion frequency until desired brightness is obtained. For longer lamp life, use as low a lamp drive frequency as is acceptable. Adjust converter frequency and inductor value to obtain acceptable brightness. For high lamp drive frequencies, employ a FET follower on the output. See application note AN-H33. Monitor overall power consumption. If above 350mW, insert a resistor in series with the lamp to decrease device power dissipation. In keeping with good circuit design practice, the supply voltage 15-12 |
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